|
Nand Flash |
|||||
|
256G
bit Nand Flash MLC |
MT29F256G08CJAAAWP-ITZ:A |
Micron |
6000 @ |
Call |
1 day |
|
256G
bit Nand Flash MLC |
MT29F256G08CJABBWP-12IT:B |
Micron |
1000 @ |
Call |
3 days |
|
256G
bit Nand Flash SLC |
MT29F256G08AUCABH3-10Z:A |
Micron |
1000 @ |
Call |
3 days |
|
128G
bit Nand Flash MLC |
MT29F128G08CFABBWP-12IT:B |
Micron |
6000 @ |
Call |
3 days |
|
128G
bit Nand Flash MLC , 25nm |
MT29F128G08CFAAAWP-Z:A |
Micron |
1000 @ |
Bid |
2 days |
|
128G
bit Nand Flash MLC |
MT29F128G08CFAAAWP-ITZ:A |
Micron |
10000 @ |
Call |
3 days |
|
128G
bit Nand Flash SLC TBGA |
MT29F128G08AKCABH2-10Z:A |
Micron |
3000 @ |
Call |
1 day |
|
64G
bit Nand Flash 8Gx8 MLC 20NM |
MT29F64G08CBABAWP:B |
Micron |
10000 @ |
USD2.55 |
2 days |
|
8G
bit Nand Flash 1Gx8 SLC |
K9K8G08U0E-SIB0 |
Samsung |
1920 @ |
USD12.00 |
1 day |
|
8G
bit Nand Flash 1Gx8 SLC |
MT29F8G08ABABAWP:B |
Micron |
8000 @ |
USD3.80 |
3 days |
|
8G
bit Nand Flash |
TH58NVG3S0HTA00 |
Toshiba |
4800 @ |
USD3.40 |
7 days |
|
8G
bit Nand Flash |
TC58NVG3S0FTA00 |
Toshiba |
480 @ |
Call |
5 days |
|
4G
bit Nand Flash Memory |
H27U4G8F2ETR-BC |
Hynix |
5760 @ |
Call |
2 days |
|
2G
bit Nand Flash memory SLC for embedded |
S34ML02G200TFI000 |
Spansion |
9600 @ |
Call |
1 day |
|
2G
bit Nand Flash Pb free |
MT29F2G16ABAEAWP-IT:E |
Micron |
2000 @ |
USD3.00 |
3 days |
|
2G
bit Nand Flash |
MT29F2G08ABAEAWP-IT:E |
Micron |
4000 @ |
Call |
3 days |
|
2G
bit Nand Flash 256Mx8 SLC |
K9F2G08U0C-SCB0 |
Samsung |
4800 @ |
USD5.00 |
2 days |
|
2G
bit Nand Flash 256Mx8 SLC |
K9F2G08U0D-SCB0 |
Samsung |
9600 @ |
USD1.05 |
2 days |
|
2G
bit Nand Flash memory for embedded |
S34ML02G100BHI000 |
Spansion |
4200 @ |
Call |
3 days |
|
2G
bit Nand Flash memory for embedded |
S34ML02G100BHI003 |
Spansion |
8000 @ |
Call |
3 days |
|
1G
bit Nand Flash memory |
S34ML01G200TFI000 |
Spansion |
9600 @ |
Call |
5 days |
|
1G
bit Nand Flash 128Mx8 PB Free |
K9F1G08U0D-SCB0 |
Samsung |
10000 @ |
USD2.20 |
1 day |
|
1G
bit Nand Flash 128Mx8 |
K9F1G08U0E-SCB0 |
Samsung |
11520 @ |
USD1.75 |
2 days |
|
1G
bit Nand Flash 128Mx8 |
K9F1G08U0F-SCB0 |
Samsung |
9600 @ |
Call |
3 days |
|
2G
bit Nand Flash |
W29N02GVSIAA |
Winbond |
20000 @ |
Call |
Stock HK |
|
1G
bit Nand Flash |
W29N01HVSINA |
Winbond |
15360 @ |
Call |
2 days |
|
1G
bit Nand Flash |
MT29F1G08ABADAWP-IT:D |
Micron |
20000 @ |
Call |
3 days |
|
1G
bit Nand Flash Industrial Temp |
MT29F1G08ABAEAWP-IT:E |
Micron |
10000 @ |
Call |
3 days |
|
256G
bit Nand Flash MLC |
MT29F256G08CBCBBJ4-5M:B |
Micron |
20000 @ |
Call |
3 days |
|
2G
bit Nand Flash SLC |
MT29F2G01ABAGDWB-IT:G |
Micron |
4000 @ |
Call |
3 days |
|
64G
bit Nand Flash 8Gx8 MLC 19nm |
TC58TEG6DDLTA00 |
Toshiba |
9600 @ |
Call |
3 days |
|
Flash Memory [NAND /NOR] |
|||||
|
2G
bit NOR Flash Memory |
PC28F00BM29EWHA |
Micron |
5520 @ |
Call |
7 days |
|
2G
bit Nor Flash Memory |
PC28F00BP30EFA |
Micron |
10000 @ |
Call |
2 days |
|
1Gbit
Flash Memory |
F59L1G81LA-25TG2Y |
ESMT |
14400 @ |
Call |
3 days |
|
512Mbit
Flash Memory |
PC48F4400P0TB0EE |
Micron |
3456 @ |
Call |
3 days |
|
128Mb
Flash Memory |
EN25QH128A-104HIP |
EON |
10000 @ |
Call |
3 days |
|
128Mbit
Serial Flash Memory |
W25Q128JVSIQ |
Winbond |
36000 @ |
Call |
2 days |
|
128Mbit
Serial Flash Memory |
W25Q128JVEIQ |
Winbond |
20000 @ |
Call |
3 days |
|
128Mbit
Serial Flash Memory |
W25Q128JVFIQ |
Winbond |
20000 @ |
Call |
Stock HK |
|
IC
FLASH SERIAL 3V 8MB 8SOP |
MX25L8006EM1I-12G |
Macronix |
20000 @ |
Call |
3 days |
|
64Mbit
FLASH MEMORY |
W25Q64JVSSIQ |
Winbond |
36000 @ |
Call |
3 days |
|
Flash
Memory |
MX25L51245GMI-08G |
Macronix |
20000 @ |
Call |
4 days |
|
128Mbit
Flash Memory |
MX25L12835FM2I-10G |
Macronix |
10000 @ |
Call |
1 day |
|
32Mbit
Serial Flash Memory |
EN25Q32-104HIP2B |
EON |
10000 @ |
Call |
3 days |
|
32Mbit
Serial Flash Memory |
W25Q32JVSSIQ |
Winbond |
54000 @ |
Call |
1 day |
|
16Mbit
Flash Memory Pb Free |
W25Q16JVSSIQ |
Winbond |
50000 @ |
Call |
Stock HK |
|
Flash
Memory Pb Free |
W25N01GVZEIG |
Winbond |
12000 @ |
Call |
booking |
|
512Mbit
NOR Flash Memory |
S25FL512SAGMFI010 |
Spansion |
9600 @ |
Call |
2 days |
|
16Mbit
Flash Memory Pb Free |
W25Q16JVSNIQ |
Winbond |
54000 @ |
Call |
Stock HK |
|
64MBit
Flash |
MX25L6406EM2I-12G |
Macronix |
20000 @ |
Call |
3 days |
|
32Mbit
Flash Memory |
N25Q032A13ESC40F |
Micron |
5000 @ |
Call |
3 days |
|
256Mbit
Serial Flash Memory |
W25Q256JVFIQ |
Winbond |
26400 @ |
Call |
Stock HK |
|
64Mbit
Flash Memory |
W25Q64FWZPIG |
winbond |
22800 @ |
Call |
5 days |
|
MCP ( NAND / DRAM ) |
|||||
|
MCP
4G Nand / 4G Mobile DDR |
H9DA4GH4JJBMCR-4EM |
Hynix |
2000 @ |
Call |
1 day |
|
Embedded MMC |
|||||
|
16GB
e-MMC |
KLMAG1JENB-B041 |
Samsung |
4480 @ |
USD6.80 |
1 day |
|
16GB
e-MMC |
KLMAG1JETD-B041 |
Samsung |
4480 @ |
USD3.50 |
3 days |
|
8GB
e-MMC MLC |
KLM8G1GEME-B041 |
Samsung |
4480 @ |
Call |
2 days |
|
8GB
e-MMC |
KLM8G1GETF-B041 |
Samsung |
10080 @ |
USD2.35 |
3 days |
|
4GB
e-MMC 4.51 |
MTFC4GACAANA-4M
IT |
Micron |
10000 @ |
USD3.45 |
3 days |
|
8GB
e-MMC |
MTFC8GACAANA-4M
IT |
Micron |
4000 @ |
USD5.80 |
3 days |
|
4GB
e-MMC |
KLM4G1FETE-B041 |
Samsung |
12800 @ |
USD1.85 |
2 days |
|
4GB
e-MMC 5.0 |
MTFC4GACAJCN-4M
IT |
Micron |
5000 @ |
Call |
4 days |
|
32GB
e-MMC v5.1 MLC |
KLMBG2JETD-B041 |
Samsung |
4480 @ |
Call |
2 days |
|
NOR Flash |
|||||
|
256Mbit
Flash Memory |
PC28F256P33BFE |
Micron |
8640 @ |
Call |
3 days |
Dram
|
Graphic DDR |
|||||
|
GDDR5
SGRAM 256Mx32 |
MT51J256M32HF-80:B |
Micron |
10000 @ |
USD5.20 |
3 days |
|
Mobile DDR |
|||||
|
LPDDR4
64GB 512Mx16 PC3733 |
H9HKNNNFBMMUDR-NMH |
Hynix |
1000 @ |
Call |
1 day |
|
LPDDR4
48GB 384Mx16 PC3733 |
H9HKNNNEBUMUBR-NMH |
Hynix |
100 @ |
Call |
1 day |
|
LPDDR4
48GB 384Mx16 PC3733 |
H9HKNNNEBMMUER-NMH |
Hynix |
10000 @ |
Call |
3 days |
|
LPDDR4
32GB 256Mx16 PC3200 |
H9HKNNNCTUMUBR-NLH |
Hynix |
2000 @ |
Call |
2 days |
|
LPDDR4
32GB 256Mx16 PC3733 |
H9HKNNNCTUMUBR-NMH |
Hynix |
5000 @ |
Call |
1 day |
|
LPDDR4
32GB |
H9HCNNNCPMMLHR-NME |
Hynix |
1000 @ |
Call |
1 day |
|
Mobile
LPDDR4 8Gb |
K4F8E304HB-MGCJ |
Samsung |
12800 @ |
Call |
3 days |
|
LPDDR2
32Mx32 1066MHz |
EDB1332BDBH-1DIT-F-R |
Micron |
10000 @ |
Call |
booking |
|
Mobile
DDR 64Mx32 PC400 |
MT46H64M32LFBQ-48
IT:C |
Micron |
1000 @ |
Call |
3 days |
|
LPDDR2
168 ball |
H9TKNNN8JDAPLR-NGHR |
Hynix |
10880 @ |
Call |
7 days |
|
LPDDR3
512Mx32 1600MHz |
EDFA232A2MA-GD-F |
Micron |
5000 @ |
Call |
3 days |
|
LPDDR3
256Mx32 PC1866 |
MT52L256M32D1PF-107
WT:B |
Micron |
2000 @ |
Call |
3 days |
|
16Gbit
512Mx32 Mobile LPDDR3 253 balls |
K3QF2F20DM-AGCE |
Samsung |
5000 @ |
Call |
2 days |
|
Mobile
LPDDR3 16Gx32 |
K4E6E304EE-AGCE |
Samsung |
2000 @ |
Call |
1 day |
|
Mobile
LPDDR3 16Gb 167FBGA |
K4E6E304EB-EGCF |
Samsung |
5600 @ |
Call |
2 days |
|
Mobile
LPDDR3 8Gbit 256M*32bit, FBGA 178BALL |
K4E8E324EB-EGCF |
Samsung |
10080 @ |
Call |
1 day |
|
Mobile
LPDDR3 8G x32 |
K4E8E304EE-EGCF |
Samsung |
2000 @ |
Call |
3 days |
|
Mobile
LPDDR3 8GB 256Mx32 PC1866 |
H9CKNNN8GTMPLR-NUH |
Hynix |
2000 @ |
Call |
2 days |
|
Mobile
LPDDR3 16GB 256Mx32 PC1866 216 balls |
H9CKNNNBKTMTDR-NUH |
Hynix |
2000 @ |
Call |
1 day |
|
LPDDR3
512Mx32 PC1600 |
EDFA232A2PF-GD-F-R |
Micron |
1000 @ |
Call |
1 day |
|
LPDDR3
16G 258Mx32 PC1866 |
H9CCNNNBJTALAR-NUD |
SK
Hynix |
3360 @ |
Call |
3 days |
|
LPDDR3
16G |
H9HCNNNBPUMLHR-NME |
SK
Hynix |
3360 @ |
Call |
3 days |
|
LPDDR3
32G PC1866 |
K3QF4F40BM-FGCF |
Samsung |
2880 @ |
Call |
1 day |
|
LPDDR3
8GB 128Mx32 |
H9CCNNN8JTBLAR-NUD |
Hynix |
200 @ |
Call |
3 days |
|
LPDDR4
16Gbit |
H9HCNNNBKUMLHR-NME |
SKhynix |
2000 @ |
Call |
3 days |
|
LPDDR4
16Gb |
H9HCNNNBPUMLHR-NLE |
SKhynix |
2000 @ |
Call |
3 days |
|
DDR4 |
|||||
|
DDR4
256Mx16 PC2666 |
MT40A256M16GE-075E:B |
Micron |
12000 @ |
Call |
booking |
|
DDR4
1Gx8 PC2400 |
K4A8G085WB-BCRC |
Samsung |
15360 @ |
USD4.20 |
2 days |
|
DDR4
256Mx16 PC2400 |
MT40A256M16GE-083E
IT:B |
Micron |
4000 @ |
Call |
4 days |
|
DDR4
16Gb 1Gx8 DDP PC2133 |
K4AAG085WB-MCPB |
Samsung |
10000 @ |
Call |
7 days |
|
DDR4
1Gx8 PC2400 |
MT40A1G8WE-083E:B |
Micron |
10000 @ |
Call |
4 days |
|
DDR4
1Gx4 PC2400 |
MT40A1G4HX-083E:A |
Micron |
8000 @ |
Call |
4 days |
|
DDR4
512Mx16 PC2400 |
MT40A512M16JY-083E:B |
Micron |
20000 @ |
USD4.60 |
4 days |
|
DDR4
256Mx16 PC2400 |
H5AN4G6NAFR-UHC |
Hynix |
19200 @ |
Call |
2 days |
|
DDR4
1Gx4 PC2400 |
MT40A1G4RH-083E:B |
Micron |
8000 @ |
Call |
4 days |
|
DDR4
512Mx8 PC2400 |
K4A4G085WE-BCRC |
Samsung |
20480 @ |
USD2.15 |
2 days |
|
DDR4
512Mx16 PC2400 |
K4A8G165WB-BCRC |
Samsung |
11200 @ |
USD4.05 |
3 days |
|
DDR4
512Mx8 PC2400 |
MT40A512M8RH-083E:B |
Micron |
20000 @ |
Call |
3 days |
|
DDR4
512Mx16 PC2666 |
K4A8G165WC-BCTD |
Samsung |
10080 @ |
Call |
4 days |
|
DDR4
256Mx16 PC2666 |
K4A4G165WE-BCTD |
Samsung |
22400 @ |
Call |
4 days |
|
DDR3 |
|||||
|
DDR3
512Mx8 PC2133 |
K4B4G0846E-BCNB |
Samsung |
25600 @ |
USD1.77 |
2 days |
|
DDR3
512Mx8 PC2133 |
MT41K512M8DA-093:P |
Micron |
10000 @ |
Call |
5 days |
|
DDR3
1Gx8 PC1600 |
K4B8G0846D-MYK0 |
Samsung |
10240 @ |
Call |
3 days |
|
DDR3
512Mx16 PC1600 |
MT41K512M16HA-125:A |
Micron |
-- @ |
Call |
3 days |
|
DDR3
512Mx8 PC1866 |
MT41K512M8DA-107:P |
Micron |
10000 @ |
USD1.55 |
3 days |
|
DDR3
512Mx8 PC1866 |
MT41K512M8DA-107
IT:P |
Micron |
20000 @ |
Call |
3 days |
|
DDR3
256Mx16 PC1866 1.35 |
MT41K256M16LY-107:N |
Micron |
10000 @ |
USD2.25 |
2 days |
|
DDR3
256Mx16 PC1866 |
MT41K256M16TW-107:P |
Micron |
20000 @ |
USD1.58 |
3 days |
|
DDR3
256Mx16 PC1866 |
K4B4G1646E-BCMA |
Samsung |
11200 @ |
USD1.70 |
3 days |
|
DDR3
256Mx16 PC1866 |
K4B4G1646E-BYMA |
Samsung |
22400 @ |
Call |
3 days |
|
DDR3
256Mx16 PC1866 1.5v |
H5TQ4G63CFR-RDC |
Hynix |
9600 @ |
USD1.70 |
2 days |
|
DDR3
256Mx8 PC2133 |
K4B2G0846F-BCNB |
Samsung |
20480 @ |
USD1.45 |
2 days |
|
DDR3
256Mx8 PC1866 |
K4B2G0846F-BYMA |
Samsung |
20480 @ |
USD1.35 |
2 days |
|
DDR3
512Mx8 PC1600 |
MT41K512M8RH-125:E |
Micron |
10000 @ |
USD2.80 |
4 days |
|
DDR3
512Mx8 PC1600 |
NT5CC512M8DN-DI |
Nanya |
10000 @ |
Call |
7 days |
|
DDR3
512Mx8 PC1600 1.35v |
K4B4G0846E-BYK0 |
Samsung |
10240 @ |
USD1.88 |
3 days |
|
DDR3
256Mx16 PC1600 |
K4B4G1646E-BCK0 |
Samsung |
11200 @ |
USD2.30 |
2 days |
|
DDR3
256Mx16 PC1600 |
K4B4G1646E-BYK0 |
Samsung |
11200 @ |
USD1.65 |
3 days |
|
DDR3
64Mx16 PC1866 |
MT41K64M16TW-107:J |
Micron |
20000 @ |
USD1.05 |
1 day |
|
DDR3
256Mx16 PC1600 low power |
H5TC4G63EFR-PBA |
Hynix |
10000 @ |
Call |
2 days |
|
DDR3
256Mx16 PC1600 |
H5TC4G63CFR-N0C |
Hynix |
9600 @ |
Call |
3 days |
|
DDR3
256Mx16 PC1600 |
K4B4G1646D-BCK0 |
Samsung |
11200 @ |
Call |
2 days |
|
DDR3
256Mx16 PC1600 |
MT41K256M16HA-125:E |
Micron |
10000 @ |
Call |
2 days |
|
DDR3
256Mx8 PC1600 Low Voltage |
MT41K256M8DA-125:K |
Micron |
10000 @ |
USD1.05 |
3 days |
|
DDR3
256Mx8 PC1600 Low Voltage |
MT41K256M8DA-125
IT:K |
Micron |
10000 @ |
Call |
3 days |
|
DDR3
128Mx16 PC1600 1.35V |
NT5CC128M16IP-DI |
Nanya |
4000 @ |
Call |
10 days |
|
DDR3
128Mx16 PC1600 |
K4B2G1646Q-BCK0 |
Samsung |
1120 @ |
USD4.20 |
2 days |
|
DDR3
128Mx16 PC1866 |
K4B2G1646F-BYMA |
Samsung |
22400 @ |
USD1.10 |
1 day |
|
DDR3
128Mx16 PC1600 ind temp |
MT41K128M16JT-125
IT:K |
Micron |
20000 @ |
USD1.40 |
Stock HK |
|
DDR3
128Mx8 PC1600 |
K4B1G0846I-BCK0 |
Samsung |
15360 @ |
Call |
Stock HK |
|
DDR3
64Mx16 PC1600 |
K4B1G1646I-BCK0 |
Samsung |
22400 @ |
Call |
4 days |
|
DDR3
64Mx16 PC1333 |
K4B1G1646G-BCH9 |
Samsung |
1120 @ |
USD3.20 |
2 days |
|
DDR3
256Mx16 PC1600 |
MT41K256M16HA-125
IT:E |
Micron |
10000 @ |
USD7.80 |
2 days |
|
DDR3
512Mx16 PC1600 |
K4B8G1646D-MYK0 |
Samsung |
5600 @ |
USD13.50 |
Stock HK |
|
DDR3
128Mx16 PC1866 |
H5TQ2G63GFR-RDC |
Hynix |
19200 @ |
Call |
7 days |
|
DDR2 |
|||||
|
DDR2
64Mx16 PC800 |
H5PS1G63KFR-S5C |
Hynix |
20000 @ |
Call |
2 days |
|
DDR2
32Mx16 PC800 |
W9751G6KB-25 |
Winbond |
16720 @ |
Call |
5 days |
|
DDR2
32Mx16 PC800 lead free, halogen free |
K4T51163QQ-BCE7 |
Samsung |
10240 @ |
Call |
2 days |
|
DDR2
128Mx8 PC800 |
MT47H128M8SH-25E:M |
Micron |
10000 @ |
USD1.25 |
4 days |
|
DDR2
64MX16 PC800 FBGA |
MT47H64M16NF-25E:M |
Micron |
10000 @ |
USD1.20 |
3 days |
|
DDR2
64Mx16 PC800 |
H5PS1G63KFR-S6C |
Hynix |
9600 @ |
Call |
5 days |
|
DDR2
64MX16 PC800 FBGA Ind. Temp |
MT47H64M16NF-25E
IT:M |
Micron |
20000 @ |
USD1.55 |
3 days |
|
DDR2
32Mx16 PC800 |
MT47H32M16NF-25E
IT:H |
Micron |
4000 @ |
Call |
3 days |
|
DDR1-400 |
|||||
|
DDR
16Mx16-5 PB Free |
W9425G6KH-5 |
Winbond |
30000 @ |
Call |
stock HK |
|
SDRAM- PC166 |
|||||
|
SD
16Mx16 PC166 Pb Free |
MT48LC16M16A2P-6A:G |
Micron |
2000 @ |
Call |
3 days |
|
SD
4Mx16-75 PC166 Pb Free |
MT48LC4M16A2P-6A:J |
Micron |
10000 @ |
Call |
3 days |
|
SDRAM- PC133 |
|||||
|
SD
16Mx16 PC133 Pb Free Industrial grade |
W9825G6KH-6I |
Winbond |
17280 @ |
Call |
10 days |
|
8Mbit
IC Flash |
W25Q80DVSNIG |
Winbond |
30000 @ |
Call |
Stock HK |
|
8Mbit
Flash |
W25Q80DVSSIG |
Winbond |
70000 @ |
Call |
Stock HK |
|
RLDRAM |
|||||
|
RLDRAM
3 64Mx18 FBGA |
MT44K64M18RB-107E:A |
Micron |
2000 @ |
Call |
booking |
Module
|
DDR4 Module 288pins PC2400 |
|||||
|
DDR4
4Gx72 ECC Reg PC2400 (32GB) |
M393A4K40BB1-CRC |
Samsung
Orig [2Gx4 36C] |
1000 @ |
Call |
5 days |
|
DDR4
4Gx72 ECC Reg PC2400 (32GB) |
M393A4K40CB1-CRC |
Samsung
Orig [2Gx4 36C] |
1000 @ |
Call |
3 days |
|
DDR4
2Gx72 ECC Reg PC2400 (16GB) |
HMA42GR7BJR4N-UHTD |
Hynix
Orig [1Gx4 36C] |
5000 @ |
Call |
7 days |
|
DDR4
2Gx64 PC2400 (16GB) |
M378A2K43CB1-CRC |
Samsung
Orig [1Gx8 16C] |
500 @ |
Call |
1 day |
|
DDR4
2Gx72 ECC Reg VLP PC2400 (16GB) |
HMA82GR8AFR8N-UHTD |
Hynix
Orig [1Gx8 18C] |
1000 @ |
Call |
Stock |
|
DDR4 SO DIMM 260pin |
|||||
|
DDR4
PC3200 SO-DIMM 512Mx64 |
HMA851S6CJR6N-XNN0 |
Hynix
Orig [512Mx16 4C] |
1000 @ |
Call |
3 days |
|
DDR4
PC2666 SO-DIMM 4Gx64 (32GB) |
M471A4G43MB1-CTD |
Samsung
Orig [2Gx8 16C] |
200 @ |
Call |
3 days |
|
DDR4
PC2666 SO-DIMM 2Gx64 (16GB) |
M471A2K43CB1-CTD |
Samsung
Orig [1Gx8 16C] |
1000 @ |
Call |
3 days |
|
DDR4
PC2666 SO-DIMM 1Gx64 (8GB) |
HMA81GS6CJR8N-VKN0 |
Hynix
Orig |
1000 @ |
USD35.00 |
10 days |
|
DDR4
PC2133 ECC SO-DIMM 2Gx64 (16GB) |
HMA82GS7AFR8N-TFT0 |
Hynix
Orig [1Gx8 16C] |
10 @ |
Call |
3 days |
|
DDR3 Module 240 pins ECC/Reg 1600
(PC3-12800) |
|||||
|
DDR3
2Gx72 ECC Reg PC1600 LV (16GB) |
M393B2G70DB0-YK0 |
Samsung
Orig [1Gx4 36C] |
100 @ |
Call |
2 days |
|
DDR3
2Gx72 ECC Reg PC1600 LV (16GB) |
M393B2G70EH0-YK0 |
Samsung
Orig [1Gx4 36C] |
300 @ |
Call |
4 days |
|
DDR3
512Mx72 ECC Reg PC1600 VLP (4GB) |
MT18KDF51272PZ-1G4K1 |
Micron
Orig |
100 @ |
Call |
booking |
|
DDR3 Module 240 pins 1600 (PC3-12800) |
|||||
|
DDR3
1Gx64 PC1600 (8GB) |
KVR16N11/8 |
Kingston
Original / Retail |
500 @ |
USD36.50 |
2 days |
|
DDR3 SO-DIMM 204 pins |
|||||
|
DDR3
PC1600 SO-DIMM 1Gx64 LV (8GB) |
M471B1G73EB0-YK0 |
Samsung
Orig [512Mx8 16C] |
1000 @ |
Call |
2 days |
SSD & Card
|
Flash Solid-State Disk |
|||||
|
6.4TB
2.5" SSD PM1725b U.2 |
MZWLL6T4HMLA-00005 |
Samsung |
5 @ |
Call |
7 days |
|
2.0TB
2.5" SSD DC P4600 1/2 Height PCIe 3.1 |
SSDPEDKE020T701 |
Intel |
20 @ |
Call |
2 days |
|
120GB
BX500 SSD 2.5" SATA 6Gb/s |
CT120BX500SSD1 |
Crucial
BX500 |
500 @ |
Call |
3 days |
|
240GB
BX500 SSD 2.5" SATA 6Gb/s |
CT240BX500SSD1 |
Crucial
BX500 |
500 @ |
Call |
3 days |
|
480GB
BX500 SSD 2.5" SATA 6Gb/s |
CT480BX500SSD1 |
Crucial
BX500 |
500 @ |
Call |
3 days |
|
1.9TB
2.5" SSD SATA 6Gb/s |
MTFDDAK1T9TDC-1AT1ZABYY |
Micron
5200 ECO |
200 @ |
Call |
booking |
|
1TB
X5 Thunderbolt Portable SSD |
MU-PB1T0B/WW |
Samsung |
100 @ |
Call |
3 days |
|
512GB
SSD 660p PCle |
SSDPEKNW512G8X1 |
Intel |
200 @ |
Call |
2 days |
|
500GB
SSD 2.5" SATA 6Gb/s |
CT500MX500SSD1 |
Crucial
MX500 |
100 @ |
Call |
2 days |
|
480GB
SSD 2.5" SATA SM863a |
MZ7KM480HMHQ-00005 |
Samsung |
1000 @ |
Call |
1 day |
|
256GB
SSD 545s Series 2.5" 3D2 SATA 6Gb/s TLC |
SSDSC2KW256G8X1 |
Intel |
200 @ |
Call |
2 days |
|
250GB
SSD 2.5" SATA 6Gb/s |
CT250MX500SSD1 |
Crucial
MX500 |
100 @ |
Call |
3 days |
|
240GB
2.5" SSD DC S4510 SATA 6Gb |
SSDSC2KB240G801 |
Intel
/ Retail |
1000 @ |
Call |
2 days |
|
6.4TB
SSD PM1725 1/2 Height PCIe Gen3 x8 |
MZPLK6T4HCJL-00003 |
Samsung |
5 @ |
Call |
3 days |
|
MicroSD Card (Trans-Flash) |
|||||
|
256GB
TransFlash Card (Micro SDXC) EVO Plus CL10 UHS-I with adapter |
MB-MC256GA/KR |
Samsung
/ Retail |
500 @ |
USD39.50 |
Stock HK |
|
512GB
TransFlash Card (Micro SDXC) EVO Plus CL10 UHS-I with adapter |
MB-MC512GA/KR |
Samsung
/ Retail |
300 @ |
USD95.00 |
Stock HK |
|
128GB
TransFlash Card (Micro SDHC) EVO Plus CL10 UHS-I with adapter |
MB-MC128GA/KR |
Samsung |
2000 @ |
USD19.50 |
1 day |
|
128GB
TransFlash Card (Micro SDHC) EVO Plus CL10 UHS-I with adapter |
MB-MC128GA/APC |
Samsung
/ Retail |
500 @ |
USD19.80 |
3 days |
|
32GB
TransFlash Card (Micro SDHC) EVO Plus CL10 UHS-I with adapter |
MB-MC32GA/APC |
Samsung
/ Retail |
1000 @ |
USD4.50 |
1 day |
|
64GB
TransFlash Card (Micro SDXC) C10 UHS-I 104 |
SDSDQAE-064G |
SanDisk
/ Bulk |
1200 @ |
Call |
booking |
|
128GB
Pro Endurance Memory Card (Micro SDXC) CL10 W/A adapter |
MB-MJ128GA/APC |
Samsung
/ Retail |
100 @ |
USD39.00 |
Stock HK |
|
32GB
Mobile Ultra TransFlash Card (Micro SDHC) C10 UHS-80mb/s w/o adapter |
SDSQUNS-032G-GN3MN |
SanDisk
/ Retail |
1000 @ |
USD4.50 |
1 day |
HDD
|
Seagate Harddisk |
|||||
|
2TB
HDD 5900rpm SATA 6Gb/s 64MB Cache 3.5" |
ST2000VX008 |
Seagate-Surveillnace |
1000 @ |
USD57.00 |
1 day |
|
1TB
3.5" Skyhawk 5900rpm SATA 6Gb/s 64MB Cache |
ST1000VX005 |
Seagate-Skyhawk-Surveillnace |
1000 @ |
USD41.00 |
1 day |